Comparative analyis and study between 180nm and 90nm

Authors

  • Shreya Patel Electronics & Communication, Sigma Institute of Engineering
  • Viral Patel Electronics & Communication, Sigma Institute of Engineering
  • Rakesh Koringa Electronics & Communication, Sigma Institute of Engineering
  • Himani Patel Computer Engineering, Sigma Institute of Engineering
  • Sachin Patel Electronics & Communication, Sigma Institute of Engineering

Keywords:

low leakage memory design, SRAM, gate leakage current, subthreshold leakage current

Abstract

Leakage components are very important for estimation and reduction of leakage power especially in sub
micron regimes in which threshold voltage, gate oxide thickness and channel length scale downwards. In present era it
provides motivation to design a low power SRAM. This paper presents comparative analysis and study in both 180nm
and 90nm, from which one can indentify that how the leakage issues become severe if technology node go downwards.

Published

2022-08-23

How to Cite

Shreya Patel, Viral Patel, Rakesh Koringa, Himani Patel, & Sachin Patel. (2022). Comparative analyis and study between 180nm and 90nm. International Journal of Advance Engineering and Research Development (IJAERD), 4(13), -. Retrieved from https://ijaerd.com/index.php/IJAERD/article/view/6020

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