High Speed Voltage Follower using DTMOS Transistor

Authors

  • Nishtha K. Patel PG Student Electronics & Communication, LCIT-Bhandu Gujarat Technological University, Gujarat, India
  • Nilesh D. Patel Assistant Professor, L.C. Institute of Technology Bhandu, Mahesana, Gujarat, India

Keywords:

Voltage Follower, Buffer, Basic Source Follower, Dynamic Threshold MOS.

Abstract

This paper describes class-A voltage followers Basic Source Follower using MOS and DTMOS Transistor.
The circuits are simulated in 90nm technology. The results are used to compare the performance of the different voltage
followers. All analysis are supported by the simulation results. Class-A voltage followers are designed in 90nm
technology. The analysis are made in terms of transient response and frequency response using ELDO spice and mentor
graphics. The propagation delay in MOS Transistor is more than DTMOS Transistor. So,the speed of the DTMOS is
more than MOS Transistor. It is found that the Power Dissipation is reduced and Frequency can be improved.

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Published

2015-04-25

How to Cite

Nishtha K. Patel, & Nilesh D. Patel. (2015). High Speed Voltage Follower using DTMOS Transistor. International Journal of Advance Engineering and Research Development (IJAERD), 2(4), 620–625. Retrieved from https://ijaerd.com/index.php/IJAERD/article/view/725

Issue

Vol. 2 No. 4 (2015): Volume 2 Issue 4, April 2015

Section

Articles